The 2N2223A-JQR is a dual NPN bipolar junction transistor with a maximum collector-base voltage of 100V and maximum collector-emitter voltage of 60V. It has a maximum DC collector current of 0.5A and a maximum power dissipation of 600mW. The transistor is packaged in a TO-77 case with a maximum package height of 6.6mm and a maximum package diameter of 9.4mm. It is made of silicon material and has a minimum DC current gain of 15 at various operating conditions. The transistor operates over a temperature range of -65°C to 200°C.
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TT 2N2223A-JQR technical specifications.
| Package/Case | TO-77 |
| Pin Count | 6 |
| PCB | 6 |
| Package Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 600mW |
| Material | Si |
| Minimum DC Current Gain | 15@10uA@5V|25@100uA@5V|50@10mA@5V |
| Maximum Transition Frequency | 50(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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