NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.2A. Maximum power dissipation is 360mW. This single-element transistor is housed in a 3-pin TO-18 metal package with through-hole mounting. Operating temperature range is -65°C to 200°C.
PackageTO-18
MountingThrough Hole
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Technical Specifications
TT 2N2369A-QR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 5.33(Max) |
| Seated Plane Height (mm) | 5.33(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Diameter (mm) | 5.84(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 4.5V |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 360mW |
| Minimum DC Current Gain | 40@[email protected]|40@10mA@1V|30@[email protected]|20@100mA@1V |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
TT 2N2369A-QR Datasheet
Download the complete datasheet for TT 2N2369A-QR to view detailed technical specifications.
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