PNP silicon bipolar junction transistor featuring a 0.6A collector current and 60V collector-emitter breakdown voltage. This single-element transistor offers a maximum operating temperature of 200°C and a 3-terminal configuration with dual terminal positions.
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Technical Specifications
TT 2N2907AUB technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | unknown |
| Military Spec | False |
Datasheet
TT 2N2907AUB Datasheet
Download the complete datasheet for TT 2N2907AUB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.