PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-39 metal package. Features a maximum collector-emitter voltage of 175V, maximum collector current of 1A, and 1000mW power dissipation. Operates across a temperature range of -65°C to 200°C with a minimum transition frequency of 100MHz. Offers a DC current gain ranging from 55 to 100 depending on operating conditions.
PackageTO-39
MountingThrough Hole
Quick Jump:
Technical Specifications
TT 2N3637-QR-A technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-205-AD
Package/Case
TO-39
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
6.6(Max)
Seated Plane Height (mm)
6.6(Max)
Pin Pitch (mm)
2.54
Package Diameter (mm)
9.4(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-205AD
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
175V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
175V
Maximum DC Collector Current
1A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
[email protected]@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V
Maximum Transition Frequency
100(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
57027, 73138,U1395
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
TT 2N3637-QR-A Datasheet
Download the complete datasheet for TT 2N3637-QR-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.