NPN bipolar junction transistor for through-hole mounting. Features a TO-66 metal package (TO-213-AA JEDEC) with 3 pins and a tab. Offers a maximum collector-emitter voltage of 60V and a continuous collector current of 4A. Maximum power dissipation is 25000mW, with a minimum DC current gain of 30. Operates across a temperature range of -65°C to 200°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 25000mW |
| Material | Si |
| Minimum DC Current Gain | 30@50mA@5V|40@500mA@5V|20@1A@10V |
| Maximum Transition Frequency | 10(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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