The 2N4239-JQR-A is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 80V and a maximum DC collector current of 1A. It has a maximum power dissipation of 800mW and a minimum DC current gain of 30 at 0.1A and 10V. The transistor is packaged in a TO-39 case with a seated plane height of 6.6mm and a pin pitch of 2.54mm. It is designed for through-hole mounting and is suitable for use in a variety of applications.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AD |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Seated Plane Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-205AD |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 800mW |
| Minimum DC Current Gain | [email protected]@10V |
| Maximum Transition Frequency | 1(Typ)MHz |
| Category | Bipolar Power |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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