
NPN bipolar junction transistor for through-hole mounting, featuring a TO-66 metal package (TO-213AA). This single-element transistor offers a maximum collector-emitter voltage of 60V and a maximum DC collector current of 1A, with a power dissipation capability of 25000mW. Key DC current gain specifications include 40 at 50mA/1V, 20 at 500mA/1V, and 10 at 1A/1V. Operating temperature range spans from -65°C to 200°C.
TT 2N4911X-JQR-A technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 31.99(Max) |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Pin Pitch (mm) | 5.33(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 25000mW |
| Minimum DC Current Gain | 40@50mA@1V|20@500mA@1V|10@1A@1V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for TT 2N4911X-JQR-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.