NPN bipolar junction transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 60V and a maximum collector current of 1A. This single-element transistor is housed in a TO-66 metal package (TO-213AA) with 3 pins and a tab. Offers a maximum power dissipation of 25000mW and operates across a temperature range of -65°C to 200°C.
PackageTO-66
MountingThrough Hole
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Technical Specifications
TT 2N4911X-QR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 25000mW |
| Minimum DC Current Gain | 40@50mA@1V|20@500mA@1V|10@1A@1V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| EU RoHS | No |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
TT 2N4911X-QR Datasheet
Download the complete datasheet for TT 2N4911X-QR to view detailed technical specifications.
No datasheet is available for this part.