NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-39 metal package. Features a maximum collector-emitter voltage of 200V, maximum collector current of 2A, and maximum power dissipation of 2000mW. Offers a minimum DC current gain of 40 at 50mA/2V, 40 at 0.5A/5V, 15 at 1A/5V, and 5 at 2A/5V. Operates across a temperature range of -65°C to 200°C.
PackageTO-39
MountingThrough Hole
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Technical Specifications
TT 2N5662-JQR-A technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-205-AD
Package/Case
TO-39
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
6.6(Max)
Seated Plane Height (mm)
6.6(Max)
Pin Pitch (mm)
2.54
Package Diameter (mm)
9.4(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-205AD
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
250V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
200V
Maximum DC Collector Current
2A
Maximum Power Dissipation
2000mW
Minimum DC Current Gain
40@50mA@2V|[email protected]@5V|15@1A@5V|5@2A@5V
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
57027, 73138,U1395
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
TT 2N5662-JQR-A Datasheet
Download the complete datasheet for TT 2N5662-JQR-A to view detailed technical specifications.
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