NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 200V collector-emitter voltage and 5A continuous collector current. Housed in a 3-pin TO-39 metal package with through-hole mounting. Operates across a wide temperature range from -65°C to 200°C. Maximum power dissipation is 1200mW.
PackageTO-39
MountingThrough Hole
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Technical Specifications
TT 2N5666-QR-B technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AD |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Seated Plane Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-205AD |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 250V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 200V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1200mW |
| Minimum DC Current Gain | 5@5A@5V|[email protected]@2V|40@1A@5V|15@3A@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| EU RoHS | No |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
TT 2N5666-QR-B Datasheet
Download the complete datasheet for TT 2N5666-QR-B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.