TT
2N6759
Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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Technical Specifications
TT 2N6759 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-3 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
No datasheet is available for this part.