Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
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TT 2N6786 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-205AF |
| Number of Elements | 1 |
| RoHS | No |
| REACH | Compliant |
| Military Spec | False |
