PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 20V collector-emitter voltage and 0.1A maximum DC collector current. This single-element transistor is housed in a 3-pin TO-18 (TO-206-AA) metal package with through-hole mounting. Maximum power dissipation is 300mW, with a typical transition frequency of 200MHz. Operating temperature range is -65°C to 175°C.
PackageTO-18
MountingThrough Hole
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Technical Specifications
TT BC179 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-206-AA
Package/Case
TO-18
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
5.33(Max)
Seated Plane Height (mm)
5.33(Max)
Pin Pitch (mm)
1.27
Package Diameter (mm)
5.84(Max)
Package Material
Metal
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
25V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
20V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
300mW
Material
Si
Maximum Transition Frequency
200(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
175°C
Compliance
Cage Code
57027, 73138,U1395
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
TT BC179 Datasheet
Download the complete datasheet for TT BC179 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.