NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 15A. Housed in a TO-257AB metal package with 3 pins and a tab, offering a pin pitch of 2.54mm. Operates across a temperature range of -65°C to 200°C, with a maximum power dissipation of 43750mW. Minimum DC current gain is specified at [email protected]@4V, 15@5A@4V, and 5@10A@4V.
TT BDS11-JQR-A technical specifications.
Download the complete datasheet for TT BDS11-JQR-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.