PNP Bipolar Junction Transistor (BJT) for through-hole mounting, featuring a TO-257AB metal package with 3 pins and a tab. This single-element silicon transistor offers a maximum collector-emitter voltage of 60V and a maximum DC collector current of 15A, with a power dissipation of 43750mW. Key DC current gain specifications include 40 at 0.5A/4V, 15 at 5A/4V, and 5 at 10A/4V, operating within a temperature range of -65°C to 200°C.
PackageTO-257AB
MountingThrough Hole
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Technical Specifications
TT BDS13-JQR technical specifications.
General
Package/Case
TO-257AB
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.92(Max)
Package Width (mm)
5.33(Max)
Package Height (mm)
10.92(Max)
Seated Plane Height (mm)
16.89(Max)
Pin Pitch (mm)
2.54
Package Material
Metal
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
15A
Maximum Power Dissipation
43750mW
Material
Si
Minimum DC Current Gain
[email protected]@4V|15@5A@4V|5@10A@4V
Maximum Transition Frequency
3(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
57027, 73138,U1395
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
TT BDS13-JQR Datasheet
Download the complete datasheet for TT BDS13-JQR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.