PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 3-pin SMD-0.5 package with no leads, measuring 7.54mm L x 10.16mm W x 2.68mm H (Max). Offers a maximum collector-emitter voltage of 80V and a continuous collector current of 15A. This single-element silicon transistor boasts a maximum power dissipation of 43750mW and a minimum DC current gain of 40 at 0.5A, 4V. Operating temperature range is -65°C to 200°C.
TT BDS14SMD05-JQR-B technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SMD |
| Package/Case | SMD-0.5 |
| Package Description | Surface Mount Device |
| Lead Shape | No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 7.54 |
| Package Width (mm) | 10.16 |
| Package Height (mm) | 2.68(Max) |
| Seated Plane Height (mm) | 3.18(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Jedec | TO-276AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 43750mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for TT BDS14SMD05-JQR-B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.