PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 15A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 43750mW. Housed in a 3-pin SMD-0.5 package with ceramic material, it operates from -65°C to 200°C.
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| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SMD |
| Package/Case | SMD-0.5 |
| Package Description | Surface Mount Device |
| Lead Shape | No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 7.54 |
| Package Width (mm) | 10.16 |
| Package Height (mm) | 2.68(Max) |
| Seated Plane Height (mm) | 3.18(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Jedec | TO-276AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 43750mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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