PNP Bipolar Junction Transistor (BJT) for power applications. Features a 100V collector-emitter voltage and 15A continuous collector current. Packaged in a TO-257AB metal case with through-hole mounting and a 3-pin configuration. Operates across a wide temperature range from -65°C to 200°C. Offers a minimum DC current gain of 40 at 0.5A and 4V. Maximum power dissipation is 43750 mW.
TT BDS15-JQR technical specifications.
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