NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 150V maximum collector-emitter voltage and 8A maximum DC collector current. Packaged in a TO-257AB metal case with through-hole mounting and a 3-pin configuration (3+Tab). Operates within a temperature range of -65°C to 200°C, with a maximum power dissipation of 43750mW. Offers a minimum DC current gain of 40 at 0.5A/2V and 15 at 4A/2V, and a minimum transition frequency of 30MHz.
TT BDS17-JQR-A technical specifications.
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