PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 8A. This single-element silicon transistor is housed in a TO-257AB metal package with a 3-pin configuration and a tab. It offers a maximum power dissipation of 43750mW and operates across a temperature range of -65°C to 200°C. Minimum DC current gain is 40 at 0.5A/2V, and the maximum transition frequency is 30MHz.
PackageTO-257AB
MountingThrough Hole
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Technical Specifications
TT BDS18-JQR-A technical specifications.
General
Package/Case
TO-257AB
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.92(Max)
Package Width (mm)
5.33(Max)
Package Height (mm)
10.92(Max)
Seated Plane Height (mm)
16.89(Max)
Pin Pitch (mm)
2.54
Package Material
Metal
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
8A
Maximum Power Dissipation
43750mW
Material
Si
Minimum DC Current Gain
[email protected]@2V|15@4A@2V
Maximum Transition Frequency
30(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
57027, 73138,U1395
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
TT BDS18-JQR-A Datasheet
Download the complete datasheet for TT BDS18-JQR-A to view detailed technical specifications.
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