PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 8A. This single-element silicon transistor is housed in a TO-257AB metal package with a 3-pin configuration and a tab. It offers a maximum power dissipation of 43750mW and operates across a temperature range of -65°C to 200°C. Minimum DC current gain is 40 at 0.5A/2V, and the maximum transition frequency is 30MHz.
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| Package/Case | TO-257AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.92(Max) |
| Package Width (mm) | 5.33(Max) |
| Package Height (mm) | 10.92(Max) |
| Seated Plane Height (mm) | 16.89(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 8A |
| Maximum Power Dissipation | 43750mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|15@4A@2V |
| Maximum Transition Frequency | 30(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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