TT
BDS28ASMD
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
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Technical Specifications
TT BDS28ASMD technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-276AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
TT BDS28ASMD Datasheet
Download the complete datasheet for TT BDS28ASMD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.