NPN Bipolar Junction Transistor (BJT) for power applications, featuring a maximum collector-emitter voltage of 325V and a continuous collector current of 30A. This single-element silicon transistor offers a maximum power dissipation of 250W and a minimum DC current gain of 12 at 8A/4V. Packaged in a TO-3 metal case with through-hole mounting, it operates across a wide temperature range from -65°C to 175°C.
PackageTO-3
MountingThrough Hole
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Technical Specifications
TT BUX23-JQR-B technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-204-AA |
| Package/Case | TO-3 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 39.94(Max) |
| Package Width (mm) | 26.67(Max) |
| Package Height (mm) | 11.43(Max) |
| Seated Plane Height (mm) | 11.43(Max) |
| Pin Pitch (mm) | 11.18(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-204-AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 400V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 325V |
| Maximum DC Collector Current | 30A |
| Maximum Power Dissipation | 250000mW |
| Material | Si |
| Minimum DC Current Gain | 12@8A@4V|8@16A@4V |
| Maximum Transition Frequency | 8(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
TT BUX23-JQR-B Datasheet
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