NPN Bipolar Junction Transistor (BJT) for power applications. Features 80V collector-emitter voltage and 5A continuous collector current. Maximum power dissipation is 40000mW. Single element, silicon transistor housed in a 3-pin TO-66 (TO-213-AA) metal package with through-hole mounting. Operating temperature range from -65°C to 200°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 31.99(Max) |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Pin Pitch (mm) | 5.33(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 40000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V|50@2A@5V|30@5A@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 57027, 73138,U1395 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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