TT
D1029UK
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DR, 5 PIN
MountingPanel
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Technical Specifications
TT D1029UK technical specifications.
General
Continuous Drain Current (ID)
35A
Gate to Source Voltage (Vgs)
20V
Height
5.08mm
Input Capacitance
420pF
Length
34.03mm
Max Operating Temperature
200°C
Max Power Dissipation
438W
Mount
Panel
RoHS Compliant
Yes
Width
10.16mm
Compliance
RoHS
Compliant
Datasheet
TT D1029UK Datasheet
Download the complete datasheet for TT D1029UK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.