RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DQ, 5 PIN
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| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.08mm |
| Input Capacitance | 60pF |
| Length | 18.9mm |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 100W |
| Mount | Screw |
| RoHS Compliant | Yes |
| Width | 6.35mm |
| RoHS | Compliant |
