TT
D2002UK
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN
MountingPanel
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Technical Specifications
TT D2002UK technical specifications.
General
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.08mm |
| Input Capacitance | 24pF |
| Length | 18.92mm |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 29W |
| Mount | Panel |
| RoHS Compliant | Yes |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.