RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DK, 5 PIN
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| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 65V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.08mm |
| Input Capacitance | 48pF |
| Length | 24.76mm |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 83W |
| Mount | Panel |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Width | 6.47mm |
| RoHS | Compliant |
