TT
D5002UK
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DA, 4 PIN
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DA, 4 PIN
MountingScrew
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Technical Specifications
TT D5002UK technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.6mm |
| Input Capacitance | 120pF |
| Length | 24.76mm |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 87W |
| Mount | Screw |
| RoHS Compliant | Yes |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.