TT
D5011UK
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, SOP-8
Frequency1GHz
PackageSO
MountingSurface Mount
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Technical Specifications
TT D5011UK technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3A
Gate to Source Voltage (Vgs)
20V
Height
2.18mm
Input Capacitance
60pF
Length
4.06mm
Max Frequency
1GHz
Min Frequency
1MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
30W
Mount
Surface Mount
Number of Elements
1
RoHS Compliant
No
Width
5.08mm
Compliance
RoHS
Not Compliant
Datasheet
TT D5011UK Datasheet
Download the complete datasheet for TT D5011UK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.