RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, SOP-8
Checking distributor stock and pricing after the page loads.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.18mm |
| Input Capacitance | 60pF |
| Length | 4.06mm |
| Max Frequency | 1GHz |
| Min Frequency | 1MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| RoHS Compliant | No |
| Width | 5.08mm |
| RoHS | Not Compliant |
