The HCT802 is a surface mount N and P-Channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.5W and a maximum drain to source breakdown voltage of 90V. The device has a drain to source resistance of 5R and a gate to source voltage of 20V. It measures 0.08inch in height, 0.25inch in length, and 0.175inch in width, and is packaged in a small outline R-CDSO-N6 package.
PackageSMD/SMT
MountingSurface Mount
PolarityN
Power1.5W
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Technical Specifications
TT HCT802 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | 90V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 90V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.08inch |
| Input Capacitance | 70pF |
| Length | 0.25inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Bulk |
| Polarization | N |
| Power Dissipation | 1.5W |
| Rds On Max | 5R |
| Width | 0.175inch |
Compliance
| RoHS | Not Compliant |
Datasheet
TT HCT802 Datasheet
Download the complete datasheet for TT HCT802 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.