HCT802TX

Small Signal Field-Effect Transistor, 2A I(D), 90V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

PackageSMD/SMT

MountingSurface Mount

PolarityN

Power1.5W

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TT HCT802TX technical specifications.

Package/Case	SMD/SMT
Continuous Drain Current (ID)	1.1A
Drain to Source Breakdown Voltage	90V
Drain to Source Resistance	5R
Drain to Source Voltage (Vdss)	90V
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	20V
Height	0.08inch
Input Capacitance	70pF
Length	0.25inch
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500mW
Mount	Surface Mount
Package Quantity	1
Packaging	Bulk
Polarization	N
Power Dissipation	1.5W
Rds On Max	5R
Width	0.175inch

RoHS	Not Compliant

This datasheet cannot be embedded due to technical restrictions.