The HCT802TXV is a dual N and P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It has a maximum drain to source voltage of 90V and a continuous drain current of 1.1A. The device has a maximum power dissipation of 500mW and a maximum on-resistance of 5 ohms. The HCT802TXV is packaged in a small outline, R-CDSO-N6 package and is intended for surface mount applications.
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TT HCT802TXV technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 90V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.03mm |
| Input Capacitance | 70pF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Bulk |
| Rds On Max | 5R |
| Width | 4.45mm |
| RoHS | Not Compliant |
Download the complete datasheet for TT HCT802TXV to view detailed technical specifications.
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