TT
IRFN9240
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN
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Technical Specifications
TT IRFN9240 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-276AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
TT IRFN9240 Datasheet
Download the complete datasheet for TT IRFN9240 to view detailed technical specifications.
No datasheet is available for this part.