TT
IRFY130
Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220M, 3 PIN
Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220M, 3 PIN
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Technical Specifications
TT IRFY130 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
No datasheet is available for this part.