Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
TT IRFY220 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-257AB |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
