TT
IRFY420
Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
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Technical Specifications
TT IRFY420 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-257AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
No datasheet is available for this part.