The TT MG6330 is a flange mount, through hole NPN transistor with a collector emitter breakdown voltage of 230V and a maximum collector current of 15A. It has a maximum power dissipation of 200W and can operate at a maximum frequency of 60MHz. The transistor is designed for use in high-power applications and has a maximum operating temperature of 150°C.
Frequency60MHz
MountingThrough Hole
PolarityNPN
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Technical Specifications
TT MG6330 technical specifications.
General
| Collector Base Voltage (VCBO) | 230V |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 18.7mm |
| Length | 15.6mm |
| Max Collector Current | 15A |
| Max Frequency | 60MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 60MHz |
| Width | 4.8mm |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.