NPN phototransistor chip for through-hole mounting, featuring a T-1 package. This silicon optical sensor operates with a collector-emitter breakdown voltage of 30V and a maximum collector current of 3mA. It offers a wide operating temperature range from -40°C to 100°C and a maximum power dissipation of 100mW. The component is RoHS compliant and detects infrared light at a wavelength of 935nm.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP505C technical specifications.
General
| Package/Case | T |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Height | 5.84mm |
| Length | 4.19mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Orientation | Top View |
| Output Voltage | 30V |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Wavelength | 935nm |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP505C Datasheet
Download the complete datasheet for TT OP505C to view detailed technical specifications.
No datasheet is available for this part.
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