The OP506D is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 3mA. It is designed for through-hole mounting and operates over a temperature range of -40°C to 100°C. The device has a power dissipation of 100mW and is compliant with RoHS regulations.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP506D technical specifications.
General
| Package/Case | T |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 3mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Output Voltage | 30V |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Wavelength | 935nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP506D Datasheet
Download the complete datasheet for TT OP506D to view detailed technical specifications.
No datasheet is available for this part.