The OP509B is a radial through hole NPN phototransistor from TT with a collector emitter breakdown voltage of 30V and a collector emitter saturation voltage of 400mV. It has a maximum collector current of 10.6mA and a maximum power dissipation of 100mW. The OP509B operates within a temperature range of -40°C to 100°C and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP509B technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Lens Style | TRANSPARENT, Clear |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 10.6mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 50° |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP509B Datasheet
Download the complete datasheet for TT OP509B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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