This is a 30V NPN phototransistor with a maximum power dissipation of 100mW, packaged in a radial package for through hole mounting. It is RoHS compliant and available in quantities of 500 in bulk packaging. The device is suitable for use in a variety of applications, including optical sensing and detection. The phototransistor is designed to operate in a side view orientation and has a wavelength of 935nm. The collector emitter breakdown voltage is 30V, and the collector emitter voltage is also 30V.
PackageRadial
MountingThrough Hole
PolarityNPN
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Technical Specifications
TT OP552A technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Orientation | Side View |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Wavelength | 935nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP552A Datasheet
Download the complete datasheet for TT OP552A to view detailed technical specifications.
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