The OP560B is a RoHS compliant, NPN phototransistor with a collector emitter breakdown voltage of 15V and a maximum collector current of 9.8mA. It has a maximum power dissipation of 100mW and is suitable for operation in temperatures ranging from -40°C to 100°C. The device is packaged in a radial, through hole package and is available in quantities of 50.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP560B technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 9.8mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Side View |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Viewing Angle | 56° |
| Wavelength | 935nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP560B Datasheet
Download the complete datasheet for TT OP560B to view detailed technical specifications.
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