NPN phototransistor for optical sensing applications. Features a 890nm infrared wavelength and a 25° viewing angle. This through-hole component is housed in a TO-18 package with a 2.54mm lead pitch. Maximum collector current is 50mA, with a collector-emitter breakdown voltage of 30V. Operating temperature range is -40°C to 100°C, with a maximum power dissipation of 250mW.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
TT OP598A technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Height
5.84mm
Lead Free
Lead Free
Lead Length
19.05mm
Lead Pitch
2.54mm
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Output Voltage
30V
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Consumption
250mW
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
DC Rated Voltage
30V
Wavelength
890nm
Width
4.67mm
Compliance
RoHS
Compliant
Datasheet
TT OP598A Datasheet
Download the complete datasheet for TT OP598A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.