General purpose NPN phototransistor for optical sensing applications. Features a 930nm peak sensitivity wavelength and a maximum collector current of 50mA. Offers a collector-emitter breakdown voltage of 25V and a maximum power dissipation of 50mW. Designed for surface mount installation with a top-view orientation. Operates across a wide temperature range from -65°C to 125°C.
MountingSurface Mount, Snap in
PolarityNPN
Power50mW
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Technical Specifications
TT OP643SL technical specifications.
General
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50mW |
| Mount | Surface Mount, Snap in |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 50mW |
| RoHS Compliant | Yes |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP643SL Datasheet
Download the complete datasheet for TT OP643SL to view detailed technical specifications.
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