Silicon NPN phototransistor with 890nm peak sensitivity, housed in a 3-pin TO-18 package for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. Offers a 400mV collector-emitter saturation voltage and a 7µs fall time. Operates across a temperature range of -65°C to 125°C with a maximum power dissipation of 250mW. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the TT OP800A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
TT OP800A technical specifications.
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 7us |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Wavelength | 890nm |
| RoHS | Compliant |
Download the complete datasheet for TT OP800A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
