Silicon NPN phototransistor with 890nm peak sensitivity, housed in a 3-pin TO-18 package for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. Offers a 400mV collector-emitter saturation voltage and a 7µs fall time. Operates across a temperature range of -65°C to 125°C with a maximum power dissipation of 250mW. RoHS compliant and lead-free.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
Quick Jump:
Technical Specifications
TT OP800A technical specifications.
General
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 7us |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP800A Datasheet
Download the complete datasheet for TT OP800A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
