Silicon NPN phototransistor with 890nm peak sensitivity, housed in a 3-pin TO-18 package for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. Offers a 400mV collector-emitter saturation voltage and a 7µs fall time. Operates across a temperature range of -65°C to 125°C with a maximum power dissipation of 250mW. RoHS compliant and lead-free.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
TT OP800A technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
7us
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Package Quantity
25
Packaging
Bulk
Polarity
NPN
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OP800A Datasheet
Download the complete datasheet for TT OP800A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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