The OP801WSL is a hermetically sealed, TO-18 packaged NPN phototransistor with a collector emitter breakdown voltage of 30V and a maximum collector current of 50mA. It operates within a temperature range of -65°C to 125°C and has a maximum power dissipation of 250mW. The device is RoHS compliant and features a top view orientation.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
TT OP801WSL technical specifications.
General
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Fall Time | 7000ns |
| Height | 5.13mm |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Packaging | Bulk |
| Polarity | NPN |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Viewing Angle | 75° |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OP801WSL Datasheet
Download the complete datasheet for TT OP801WSL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.