Silicon NPN phototransistor, TO-18 package, through-hole mount. Features 30V collector-emitter breakdown voltage, 50mA max collector current, and 250mW power dissipation. Operates across a -65°C to 125°C temperature range with an 890nm wavelength sensitivity and a 25° viewing angle. RoHS compliant and lead-free.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
TT OP804SL technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Fall Time
7000ns
Height
6.86mm
Lead Free
Lead Free
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
30V
Orientation
Top View
Output Voltage
30V
Packaging
Bulk
Polarity
NPN
Power Consumption
250mW
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
DC Rated Voltage
30V
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OP804SL Datasheet
Download the complete datasheet for TT OP804SL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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