Rectangular diffuse photoelectric sensor with through-hole mounting. Features a phototransistor output and a sensing distance ranging from 1.27mm to 30.48mm. Operates with a forward current of 12mA and a collector-emitter breakdown voltage of 30V. Maximum power dissipation is 100mW, with an operating temperature range of 0°C to 70°C. This component is RoHS compliant.
MountingThrough Hole
Power100mW
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Technical Specifications
TT OPB608V technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
12mA
Input Current
12mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
25mA
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Output Type
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
5V
Reverse Voltage
5V
Reverse Voltage (DC)
5V
RoHS Compliant
Yes
Sensing Distance
1.27mm
Wavelength
850nm
Compliance
RoHS
Compliant
Datasheet
TT OPB608V Datasheet
Download the complete datasheet for TT OPB608V to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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