Rectangular diffuse photoelectric sensor with a 3.8mm sensing distance. Features a 1-channel NPN phototransistor output and a 30V collector-emitter breakdown voltage. Operates with a 40mA forward current and 100mW power dissipation, within a -40°C to 80°C temperature range. Chassis and screw mountable, this RoHS compliant component is supplied in bulk packaging.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB704WZ technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 40mA |
| Height | 23.36mm |
| Input Current | 40mA |
| Lead Free | Lead Free |
| Length | 18.03mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 25mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Type | Phototransistor, NPN |
| Output Voltage | 30V |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage | 2V |
| Reverse Voltage (DC) | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 3.8mm |
| Wavelength | 890nm |
| Width | 18mm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB704WZ Datasheet
Download the complete datasheet for TT OPB704WZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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