Rectangular diffuse photoelectric sensor with a 3.8mm sensing distance. Features a 1-channel NPN phototransistor output and a 30V collector-emitter breakdown voltage. Operates with a 40mA forward current and 100mW power dissipation, within a -40°C to 80°C temperature range. Chassis and screw mountable, this RoHS compliant component is supplied in bulk packaging.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB704WZ technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
40mA
Height
23.36mm
Input Current
40mA
Lead Free
Lead Free
Length
18.03mm
Max Breakdown Voltage
30V
Max Collector Current
25mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Chassis Mount, Screw
Number of Channels
1
Number of Elements
1
Output Type
Phototransistor, NPN
Output Voltage
30V
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
3.8mm
Wavelength
890nm
Width
18mm
Compliance
RoHS
Compliant
Datasheet
TT OPB704WZ Datasheet
Download the complete datasheet for TT OPB704WZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.