The OPB740 is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum operating temperature range of -40°C to 85°C. It operates at a supply voltage of 1.7V and has a power dissipation of 100mW. The device is available in a through-hole package and is compliant with RoHS regulations. It is designed for use in applications where a resistive or magnetic sensing distance of 0.15inch is required.
MountingThrough Hole
PolarityNPN
Power100mW
Quick Jump:
Technical Specifications
TT OPB740 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 20mA |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.15inch |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB740 Datasheet
Download the complete datasheet for TT OPB740 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
